APTGT100A170TG APTGT100A170TG ? rev 1 july, 2006 www.microsemi . com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 150 i c continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 200 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 560 w rbsoa reverse bias safe operating area t j = 125c 200a @ 1600v these devices are sensitive to electrostatic discharge. proper handing procedures should be followed . see application note apt0502 on www.microsemi.com vbus q1 g1 e1 out nt c2 0/vbu s g2 e2 nt c1 q2 out out ntc2 vbus e1 g2 e2 ntc1 0/vbus g2 e2 g1 v ces = 1700v i c = 100a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant phase leg trench + field stop igbt ? power modul e
APTGT100A170TG APTGT100A170TG ? rev 1 july, 2006 www.microsemi . com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 250 a t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 100a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 2ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 9 c oes output capacitance 0.36 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.3 nf t d(on) tur n-o n delay ti me 370 t r rise time 40 t d(off) turn-off delay time 650 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 100a r g = 4.7 ? 180 ns t d(on) turn-on delay time 400 t r rise time 50 t d(off) turn-off delay time 800 t f fall time inductive switching (125c) v ge = 15v v bus = 900v i c = 100a r g = 4.7 ? 300 ns e on tur n-o n switchi ng energy t j = 125c 32 e off turn-off switching energy v ge = 15v v bus = 900v i c = 100a r g = 4.7 ? t j = 125c 31 mj chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 250 i rm maximum reverse leakage current v r =1700v t j = 125c 500 a i f dc forward current tc = 80c 100 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 100a t j = 125c 1.9 v t j = 25c 385 t rr reverse recovery time t j = 125c 490 ns t j = 25c 25 q rr reverse recovery charge t j = 125c 42 c t j = 25c 11 e r reverse recovery energy i f = 100a v r = 900v di/dt =1000a/s t j = 125c 21 mj
APTGT100A170TG APTGT100A170TG ? rev 1 july, 2006 www.microsemi . com 3 - 5 temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.22 r thjc junction to case thermal resistance diode 0.39 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 3500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g sp4 package outline (dimensions in mm) al l d imensio ns marked " * " are t ol erenced as : see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT100A170TG APTGT100A170TG ? rev 1 july, 2006 www.microsemi . com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 25 50 75 100 125 150 175 200 00.511.522.533.54 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =20v v ge =9v 0 40 80 120 160 200 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 5 6 7 8 9 10 11 12 13 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 20 40 60 80 100 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 900v v ge = 15v r g = 4.7 ? t j = 125c eon eoff er 0 12.5 25 37.5 50 62.5 75 87.5 100 0 5 10 15 20 25 30 35 40 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 100a t j = 125c switching energy losses vs gate resistanc e reverse bias safe operating area 0 50 100 150 200 250 0 400 800 1200 1600 2000 v ce (v) i c (a) v ge =15v t j =125c r g =4.7 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT100A170TG APTGT100A170TG ? rev 1 july, 2006 www.microsemi . com 5 - 5 forward characteristic of diode t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 0 0.5 1 1.5 2 2.5 3 v f (v) i f (a ) hard switching zcs zvs 0 5 10 15 20 25 0 20406080100120140 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =4.7 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
|
